METHOD OF PRODUCING ANNEAL WAFER AND ANNEAL WAFER

专利名称：METHOD OF PRODUCING ANNEAL WAFER

AND ANNEAL WAFER

发明人：KOBAYASHI, N.,TAMATSUKA,

MASARO,NAGOYA, TAKATOSHI,QU, WEIFEIG,IIDA, MAKOTO

申请号：EP01967719申请日：20010918公开号：EP1251554A4公开日：20070801

摘要：The present invention provides an annealed wafer manufacturing method usinga heat treatment method causing no change in resistivity of a wafer surface even when asilicon wafer having boron deposited on a surface thereof from an environment issubjected to heat treatment in an insert gas atmosphere and enabling the heat

treatment in an ordinary diffusion furnace not requiring a sealed structure for increasingairtightness nor any specific facility such as explosion-proof facility. The present inventionalso provides an annealed wafer in which a boron concentration in the vicinity of a surfacethereof is constant and crystal defects are annihilated. In the annealed wafer

manufacturing method, a silicon wafer having a natural oxide film formed on a surfacethereof with boron deposited thereon from an environment is subjected to heattreatment in an atmosphere containing hydrogen gas to remove the deposited boronbefore the natural oxide film is removed, and then is subjected to heat treatment in aninert gas atmosphere.

申请人：SHIN-ETSU HANDOTAI CO., LTD

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